Intellectual Property Sales List
지적재산 사항
| 국내외 구분 | 해외 | 지적재산 형태 | 특허 |
|---|---|---|---|
| 출원번호 | US 12/342426 | 등록번호 | 8058676 |
| 별명(고안)의 명칭 | Spin transistor using double carrier supply layer structure | ||
| 별명(고안)의 명칭(영문) | |||
| 지적재산 분야 | 기계 | ||
| 이미지파일[C] | |||
| 첨부파일 | |||
| 특허평가 등급 | 특허평가 점수 | ||
| 기술가치평가 금액 | |||
사업화 정보
| 지적재산 개요 및 요약 | A spin transistor includes a semiconductor substrate including a channel layer having a 2-dimensional electron gas structure and upper and lower cladding layers disposed respectively in upper and lower sides of the channel layer; ferromagnetic source and drain electrodes formed on the semiconductor substrate and disposed spaced apart from each other; a gate electrode disposed between the source electrode and the drain electrode and having a gate voltage applied thereto in order to control the spin of electrons passed through the channel layer; a first carrier supply layer disposed between the lower cladding layer and the channel layer to supply carriers to the channel layer; and a second carrier supply layer disposed between the upper cladding layer and the channel layer to supply carriers to the channel layer. |
|---|---|
| 지적재산 거래형태 | 권리양도 ( 전체 ) |
| 10,000,000원 ~ 10,000,000원 | |
| 지적재산 단계 | 아이디어 단계 |
#Machine, #Spin, #Transistor, #electron, #Gas, #Carrier, #Supply, #Semiconductor
