Intellectual Property Sales List
지적재산 사항
| 국내외 구분 | 해외 | 지적재산 형태 | 특허 |
|---|---|---|---|
| 출원번호 | US 12/233488 | 등록번호 | 8053851 |
| 별명(고안)의 명칭 | Spin transistor using epitaxial ferromagnet-semiconductor junction | ||
| 별명(고안)의 명칭(영문) | |||
| 지적재산 분야 | 기계 | ||
| 이미지파일[C] | |||
| 첨부파일 | |||
| 특허평가 등급 | 특허평가 점수 | ||
| 기술가치평가 금액 | |||
사업화 정보
| 지적재산 개요 및 요약 | A spin transistor conducive to the miniaturization and large scale integration of devices, because a magnetization direction of a source and a drain is determined by a direction of the epitaxial growth of a ferromagnet. The spin transistor includes a semiconductor substrate having a channel layer formed thereinside; ferromagnetic source and drain epitaxially grown on the semiconductor substrate and magnetized in a longitudinal direction of the channel layer due to magnetocrystalline anisotropythe source and drain being disposed spaced apart from each other in a channel direction and magnetized in the same direction; and a gate disposed between the source and the drain to be insulated with the semiconductor substrate and formed on the semiconductor substrate to control the spin of electrons that are passed through the channel layer. |
|---|---|
| 지적재산 거래형태 | 권리양도 ( 전체 ) |
| 10,000,000원 ~ 10,000,000원 | |
| 지적재산 단계 | 아이디어 단계 |
#Epi, #Semiconductor, #Joint, #Spin, #Transistor, #Drane, #회전제어, #Rotational control
